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Numéro de référence | D1083UK | ||
Description | METAL GATE RF SILICON FET | ||
Fabricant | Seme LAB | ||
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
4
TO–263 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
TetraFET
D1083UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
• LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD Power Dissipation
62.5W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
TSTG
Storage Temperature
–65 to 125°C
TJ Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected]
Prelim. 7/96
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Pages | Pages 2 | ||
Télécharger | [ D1083UK ] |
No | Description détaillée | Fabricant |
D1083UK | METAL GATE RF SILICON FET | Seme LAB |
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