DataSheetWiki


D1083UK fiches techniques PDF

Seme LAB - METAL GATE RF SILICON FET

Numéro de référence D1083UK
Description METAL GATE RF SILICON FET
Fabricant Seme LAB 
Logo Seme LAB 





1 Page

No Preview Available !





D1083UK fiche technique
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
4
TO–263 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
TetraFET
D1083UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD Power Dissipation
62.5W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
TSTG
Storage Temperature
–65 to 125°C
TJ Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected]
Prelim. 7/96

PagesPages 2
Télécharger [ D1083UK ]


Fiche technique recommandé

No Description détaillée Fabricant
D1083UK METAL GATE RF SILICON FET Seme LAB
Seme LAB

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche