(PDF) D2008UK Datasheet - METAL GATE RF SILICON FET

Número de pieza	D2008UK
Descripción	METAL GATE RF SILICON FET
Fabricantes	Seme LAB
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No Preview Available ! TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. SINGLE ENDED FEATURES 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS 2 13 2.54 (0.100) • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1 – DRAIN PIN2 – GATE PIN3 – SOURCE APPLICATIONS • VHF COMMUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain – Source Breakdown Voltage 65V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 1 page

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PDF D2008UK Data sheet ( Hoja de datos )