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Numéro de référence | D2053UK | ||
Description | METAL GATE RF SILICON FET | ||
Fabricant | Seme LAB | ||
Logo | |||
TetraFET
D2053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
E
D
F
8
7
6
5
O
J
KL
1
2
R
3
4
C
A
Q
N
M
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
I
P
H
G
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common)
PIN 2 Drain 1
PIN 6 Gate 2
PIN 3 Drain 2
PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM mm
Tol. Inches Tol.
A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45° 5°
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
R 0.25 0.07 0.010 .003
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
15W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
1A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 9/00
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Pages | Pages 2 | ||
Télécharger | [ D2053UK ] |
No | Description détaillée | Fabricant |
D2053UK | METAL GATE RF SILICON FET | Seme LAB |
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