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Numéro de référence | 2SJ0536 | ||
Description | Silicon P-Channel MOS FET | ||
Fabricant | Panasonic Semiconductor | ||
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1 Page
Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (Vth: −1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
−30
±20
−100
−200
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2C
s Electrical Characteristics (Ta = 25°C)
Parameter
Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time
Symbol
IDSS
IGSS
Vth
| Yfs |
RDS(on)
ton
toff
Conditions
VDS = −30V, VGS = 0
VGS = ±20V, VDS = 0
VDS = −5V, ID = −1µA
VDS = −5V, ID = −10mA
VGS = −5V, ID = −10mA
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
min
−1
8
typ max Unit
− 0.1
µA
±1 µA
−2 V
mS
50 75 Ω
100 µs
25 µs
1
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Pages | Pages 2 | ||
Télécharger | [ 2SJ0536 ] |
No | Description détaillée | Fabricant |
2SJ0536 | Silicon P-Channel MOS FET | Panasonic Semiconductor |
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