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Panasonic Semiconductor - Silicon P-Channel MOS FET

Numéro de référence 2SJ0536
Description Silicon P-Channel MOS FET
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SJ0536 fiche technique
Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (Vth: 1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
30
±20
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2C
s Electrical Characteristics (Ta = 25°C)
Parameter
Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time
Symbol
IDSS
IGSS
Vth
| Yfs |
RDS(on)
ton
toff
Conditions
VDS = 30V, VGS = 0
VGS = ±20V, VDS = 0
VDS = 5V, ID = 1µA
VDS = 5V, ID = 10mA
VGS = 5V, ID = 10mA
VDD = 5V, VGS = 5 to 0V, RL = 200
VDD = 5V, VGS = 5 to 0V, RL = 200
min
1
8
typ max Unit
0.1
µA
±1 µA
2 V
mS
50 75
100 µs
25 µs
1

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