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Panasonic Semiconductor - Silicon P-Channel Junction FET

Numéro de référence 2SJ164
Description Silicon P-Channel Junction FET
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SJ164 fiche technique
Silicon Junction FETs (Small Signal)
2SJ164
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VGDS
ID
IG
PD
Tch
Tstg
65
20
10
300
150
55 to +150
Unit
V
mA
mA
mW
°C
°C
4.0±0.2
unit: mm
marking
123
1.27 1.27
1: Source
2.54±0.15
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 10V, VGS = 0
0.2
6 mA
Gate to Source leakage current IGSS
VGS = 30V, VDS = 0
10 nA
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
65
V
Gate to Source cut-off voltage VGSC
VDS = 10V, ID = 10µA
1.5 3.5
V
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 1mA, f = 1kHz
1.8
2.5
mS
Drain to Source ON-resistance RDS(on) VDS = 10mV, VGS = 0
300
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
VDS = 10V, VGS = 0, f = 1MHz
10 pF
3 pF
Reverse transfer capacitance (Common Source) Crss
3 pF
* IDSS rank classification
Runk
O
P
IDSS (mA) 0.2 to 1 0.6 to 1.5
Q
1 to 3
R
2.5 to 6
1

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