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2SJ191 fiches techniques PDF

Sanyo Semicon Device - P-Channel Silicon MOSFET

Numéro de référence 2SJ191
Description P-Channel Silicon MOSFET
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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2SJ191 fiche technique
Ordering number:EN3764A
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
P-Channel Silicon MOSFET
2SJ191
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2083B
[2SJ191]
6.5
5.0
4
2.3
0.5
unit:mm
2092B
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TP
[2SJ191]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40199TH (KT)/42893TH/N1292MH (KOTO) 8-7542, 7921 No.3764–1/4

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