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Número de pieza | 2SJ221 | |
Descripción | Silicon P-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SJ221 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 2SJ221
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
1 page 5,000
3,000
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
VGS = 0,
300
100
30
10
5
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
VDD = –10 V
–25 V
ID = –20 A
–20 –50 V
0
–4
–40
VDS
–60
–80
VDD = –50 V
–25 V
–10 V
VGS
–8
–12
–16
–100
0
20 40 60 80
Gate Charge Qg (nc)
–20
100
10,000
1,000
100
2SJ221
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
Crss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
5,000
3,000
1,000
300
100
30
10
Switching Characteristics
VGS = 10 V, VDD =.. –30 V
PW = 2 µs, duty <= 1%
td (off)
tf
tr
td (on)
5
–0.1 –0.3 –1 –3 –10 –30
Drain Current ID (A)
–100
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SJ221.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SJ220 | Silicon P-Channel MOS FET | Hitachi |
2SJ220L | Silicon P-Channel MOS FET | Hitachi |
2SJ220S | Silicon P-Channel MOS FET | Hitachi |
2SJ221 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
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