(PDF) 2SJ221 Datasheet - Silicon P-Channel MOS FET

Número de pieza	2SJ221
Descripción	Silicon P-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 1 page 5,000 3,000 1,000 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/µs, Ta = 25°C VGS = 0, 300 100 30 10 5 –0.1 –0.3 –1 –3 –10 –30 –100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 0 VDD = –10 V –25 V ID = –20 A –20 –50 V 0 –4 –40 VDS –60 –80 VDD = –50 V –25 V –10 V VGS –8 –12 –16 –100 0 20 40 60 80 Gate Charge Qg (nc) –20 100 10,000 1,000 100 2SJ221 Typical Capacitance vs. Drain to Source Voltage Ciss Coss VGS = 0 f = 1 MHz Crss 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) 5,000 3,000 1,000 300 100 30 10 Switching Characteristics VGS = 10 V, VDD =.. –30 V PW = 2 µs, duty <= 1% td (off) tf tr td (on) 5 –0.1 –0.3 –1 –3 –10 –30 Drain Current ID (A) –100 5 Page

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PDF 2SJ221 Data sheet ( Hoja de datos )