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PDF 2SK0601 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0601 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on)
q High-speed switching
q Allowing to be driven directly by CMOS and TTL
q Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
VDS
80 V
Gate to Source voltage VGSO 20 V
Drain current
ID ±0.5 A
Max drain current
Allowable power dissipation
IDP
PD*
±1 A
1W
Channel temperature
Storage temperature
Tch 150 °C
Tstg
−55 to +150
°C
* PC board: Copper foil of the drain portion should have a area of 1cm2 or
more and the board thickness should be 1.7mm.
s Electrical Characteristics (Ta = 25°C)
4.5±0.1
1.6±0.2
1.5±0.1
45˚
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
0.4±0.04
marking
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
Marking Symbol: O
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Drain to Source ON-resistance
Vth
RDS(on)*1
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Crss
ton*2
toff*2
*1 Pulse measurement
*2 ton, toff measurement circuit
VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
10 µA
0.1 µA
80 V
1.5 3.5 V
2 4Ω
300 mS
45 pF
30 pF
8 pF
15 ns
20 ns
Vin = 10V
t = 1µS
f = 1MHZ
50Ω
Vout
68Ω
VDD = 30V
Vin
Vout
10% Vin
90% Vout
ton
10%
90%
toff
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK0601.PDF ] | |
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