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Numéro de référence | 3N187 | ||
Description | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | ||
Fabricant | Vaishali Semiconductor | ||
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Pages | Pages 8 | ||
Télécharger | [ 3N187 ] |
No | Description détaillée | Fabricant |
3N187 | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR | Vaishali Semiconductor |
3N187 | Trans MOSFET N-CH 25V 0.03A | New Jersey Semiconductor |
3N188 | (3N188 - 3N191) Dual P-Channel Enhancement Mode MOSFET | Intersil |
3N188 | Trans MOSFET N-CH 25V 0.03A | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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