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Intersil Corporation - 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs

Numéro de référence FG50N06L
Description 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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FG50N06L fiche technique
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet
October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06LE
TO-247
FG50N06L
RFP50N06LE
TO-220AB
FP50N06L
RF1S50N06LESM TO-263AB
F50N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 50A, 60V
• rDS(ON) = 0.022
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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