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FGB30N6S2 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - 600V/ SMPS II Series N-Channel IGBT

شماره قطعه FGB30N6S2
شرح مفصل 600V/ SMPS II Series N-Channel IGBT
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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FGB30N6S2 شرح
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
G
G
E
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

قانون اساسیصفحه 8
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