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ETC - High Dynamic Range FET

Numéro de référence FH101
Description High Dynamic Range FET
Fabricant ETC 
Logo ETC 





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FH101 fiche technique
FH101
High Dynamic Range FET
The Communications Edge
Product Information
Product Features
Product Description
Functional Diagram
50-3000 MHz Bandwidth
The FH101 is a high dynamic range FET packaged
+36 dBm Output IP3
1.2 dB Noise Figure
in a low cost surface mount package. The device is
available in both the standard SOT-89 package
and the environmentally friendly lead-free and
18 dB Gain
“green” SOT-89 package. The combination of low
+18 dBm P1dB
Single or Dual Supply
Operation
noise figure and high output IP3 at the same bias
point makes it ideal for receiver and transmitter
applications. The FH101 achieves +36 dBm OIP3
MTBF >100 Years
at a mounting temperature of 85°C with an associ-
SOT-89 SMT Package
ated MTBF of >100 years. The package is a SOT-
89. All devices are 100% RF and DC tested.
Actual Size
The product is targeted for applications where high
linearity is required.
4
123
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter Units
Saturated Drain Current, Idss mA
Transconductance, Gm
mS
Pinch Off Voltage, Vp
V
Min.
100
-3.0
Typical
140
120
-1.5
Max.
170
RF Parameter
Small Signal Gain, Gss
Max Stable Gain, Gmsg
Units
dB
dB
Min.
17
Typical
18
23
Max.
Output IP3
dBm 32
36
Output P1dB
Noise Figure, NF7
dBm
dB
18
1.2
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Device needs appropriate match to become unconditionally stable.
4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
5. Idss is measured with Vgs = 0 V.
6. Pinch off voltage is measured when Ids = 0.6 mA.
7. Measured with Vds = 3.3 V, 50% Idss.
Typical Parameters
Parameter
Frequency
S21
S11
S22
Output IP3
Output P1dB
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
900
19.0
-10.7
-9.7
+38.0
+18.8
2.7
1900
16.0
-12.3
-17.2
+33.6
+19.1
3.1
Drain Bias Supply
Gate Bias
5 V @ 140 mA
0V
Typical parameters reflect performance in an application circuit.
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Operating Case Temperature
Storage Temperature
Input RF Power (continuous)
+6.0 V
-6.0 V
4.5 mA
-40 to +85°C
-55 to +125°C
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
FH101
FH101-G
High Dynamic Range FET (leaded)1
High Dynamic Range FET (lead-free)2
1 Product may contain lead-bearing materials. Maximum +235°C reflow temperature.
2 Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also
compatible with leaded soldering process.
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
April 2004

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