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Numéro de référence | FJA4310 | ||
Description | NPN Epitaxial Silicon Transistor | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
FJA4310
Audio Power Amplifier
• High Current Capability : IC=10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4210
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-3P
1.Base 2.Collector 3.Emitter
Value
200
140
6
10
1.5
100
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE * DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
* Pulse Test : PW=20µs
IC=5mA, IE=0
IC=50mA, RBE=∞
IE=5mA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCB=10V, f=1MHz
VCE=5V, IC=1A
Min.
200
140
6
50
Typ.
250
30
Max.
10
10
180
0.5
Units
V
V
V
µA
µA
V
pF
MHz
hFE Classification
Classification
hFE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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Pages | Pages 5 | ||
Télécharger | [ FJA4310 ] |
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