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Numéro de référence | FJN3303 | ||
Description | NPN Epitaxial Silicon Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
May 2005
FJN3303
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
1 TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
Base Current (Pulse) *
Collector Power Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
-65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
©2005 Fairchild Semiconductor Corporation
FJN3303 Rev. D
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FJN3303 ] |
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