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Fairchild Semiconductor - NPN Epitaxial Silicon Transistor

Numéro de référence FJN3303
Description NPN Epitaxial Silicon Transistor
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FJN3303 fiche technique
May 2005
FJN3303
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charger
1 TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
Base Current (Pulse) *
Collector Power Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
* Pulse Test: Pulse Width = 5ms, Duty Cycle 10%
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
-65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
©2005 Fairchild Semiconductor Corporation
FJN3303 Rev. D
1
www.fairchildsemi.com

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