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Numéro de référence | FJP13007 | ||
Description | High Voltage Switch Mode Application | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FJP13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE1
hFE2
VCE(sat)
Collector- Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50Ω
hFE Classification
Classification
hFE1
R(H1)
15 ~ 28
Min.
400
8
5
4
Typ.
110
Max.
1
60
30
1
2
3
1.2
1.6
1.6
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
O(H2)
26 ~ 39
©2004 Fairchild Semiconductor Corporation
Rev. B, July 2004
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Pages | Pages 5 | ||
Télécharger | [ FJP13007 ] |
No | Description détaillée | Fabricant |
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