|
|
Datasheet FJV3110R-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
FJV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FJV1845 | NPN Epitaxial Silicon Transistor FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage  Fairchild Semiconductor transistor | | |
| 2 | FJV3101 | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E Fairchild Semiconductor transistor | | |
| 3 | FJV3101R | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E Fairchild Semiconductor transistor | | |
| 4 | FJV3102 | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2 Fairchild Semiconductor transistor | | |
| 5 | FJV3102R | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2 Fairchild Semiconductor transistor | | |
| 6 | FJV3103R | NPN Epitaxial Silicon Transistor FJV3103R
FJV3103R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R23
NPN Epit Fairchild Semiconductor transistor | | |
| 7 | FJV3104R | NPN Epitaxial Silicon Transistor FJV3104R
FJV3104R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJV4104R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R24
R1 B R2 Fairchild Semiconductor transistor | |
| Esta página es del resultado de búsqueda del FJV3110R-PDF.HTML. Si pulsa el resultado de búsqueda de FJV3110R-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |