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FKBL401 fiches techniques PDF

EIC discrete Semiconductors - FAST RECOVERY BRIDGE RECTIFIERS

Numéro de référence FKBL401
Description FAST RECOVERY BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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FKBL401 fiche technique
FKBL400 - FKBL410
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
KBL
FEATURES :
* High case dielectric strength of 2000 V DC
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 5.15 grams
0.77 (19.56)
0.73 (18.54)
0.825 (20.95)
0.605 (15.36)
+ AC AC
1.00 (25.4)
MIN.
0.085 (2.16)
0.065 (1.65)
0.052 (1.32)
0.048 (1.22)
0.200 (5.08)
0.190 (4.82)
0.265 (6.73 )
0.235 (5.97)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FKBL
400
FKBL
401
FKBL
402
FKBL
404
FKBL
406
FKBL
408
FKBL
410
UNIT
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 50 °C
I F(AV)
4.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
IFSM
I2t
150 Amps.
166 A2S
Maximum Forward Voltage drop per Diode at IF = 4.0 Amps.
VF
1.4 Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
IR
I R(H)
10 µA
1.0 mA
Maximum Reverse Recovery Time (Note 1)
Trr 150 250 500 ns
Typical Thermal Resistance per Diode (Note 2)
Operating Junction Temperature Range
RθJC
TJ
3.3
- 50 to + 150
°C/W
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to case with mounted on a 2.0" X 1.6"x 0.3" ( 5 cm. x 4 cm. x 0.8cm ) Al. Plate.
UPDATE : APRIL 21, 1998

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