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PDF FMB100 Data sheet ( Hoja de datos )
| Número de pieza | FMB100 | |
| Descripción | NPN Multi-Chip General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Discrete POWER & Signal
Technologies
FMB100
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .NA
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings* TA =25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
FMB100
700
5.6
180
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation
1 page | ||
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| PDF Descargar | [ Datasheet FMB100.PDF ] | |
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