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Sanyo Semicon Device - High-Frequency General-Purpose Amp/ Differential Amp Applications

Numéro de référence FC119
Description High-Frequency General-Purpose Amp/ Differential Amp Applications
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FC119 fiche technique
Ordering number:EN3061A
FC119
NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose Amp,
Differential Amp Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC119 is formed with two chips, being equiva-
lent to the 2SC2814, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2068
[FC119]
Electrical Connection
E1:Emitter1
E2:Emitter2
B2:Base2
C2:Collerctor2
B1:Base1
C1:Collector1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base to Emitter Voltage Drop
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base to Collector Time Constant
Noise Figure
Power Gain
ICBO VCB=10V, IE=0
IEBO
hFE
hFE(small/-
large)
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VBE(large VCE=6V, IC=1mA
-small)
fT VCE=6V, IC=1mA
Cre
rbb'cc
NF
VCE=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
PG VCE=6V, IC=1mA, f=100MHz
Note: The specifications shown above are for each individual transistor.
Marking:119
SANYO:CP6
Ratings
30
20
5
30
200
300
150
–55 to+150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Ratings
min typ
80
0.8 0.98
max
0.1
0.1
200
Unit
µA
µA
1.0 15 mV
200 320
0.95
3.0
25
MHz
1.2 pF
20 ps
dB
dB
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6169MO/5129MO, TS No.3061-1/5

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