|
|
PDF FC120 Data sheet ( Hoja de datos )
| Número de pieza | FC120 | |
| Descripción | High-Frequency General-Purpose Amp/ Differential Amp Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FC120 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Ordering number:EN3062A
FC120
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency General-Purpose Amp,
Differential Amp Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC120 is formed with two chips, being equiva-
lent to the 2SC3142, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2068
[FC120]
Electrical Connection
E1:Emitter1
E2:Emitter2
B2:Base2
C2:Collerctor2
B1:Base1
C1:Collector1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
1 unit
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base to Emitter Voltage Drop
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base to Collector Time Constant
Noise Figure
Power Gain
ICBO
IEBO
hFE
hFE(small/
large)
VBE(large
-small)
fT
Cre
rbb'cc
NF
PG
VCB=10V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=6V, IC=4mA
VCE=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
VCE=6V, IC=1mA, f=100MHz
Note: The specifications shown above are for each individual transistor.
Marking:120
SANYO:CP6
Ratings
25
20
3
30
200
300
150
–55 to+150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Ratings
min typ
80
0.8 0.98
max
0.1
0.1
200
Unit
µA
µA
1.0 15 mV
450 750
0.6
2.2
28
MHz
0.9 pF
19 ps
dB
dB
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/6169MO/5169MO, TS No.3062-1/6
1 page  
FC120
No.3062-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FC120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FC12 | High-Frequency Amp/ AM Applications/ Low-Frequency Amp | Sanyo Semicon Device |
| FC120 | High-Frequency General-Purpose Amp/ Differential Amp Applications | Sanyo Semicon Device |
| FC121 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | Sanyo Semicon Device |
| FC123 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) | Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |