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Sanyo Semicon Device - NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Numéro de référence FC128
Description NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FC128 fiche technique
Ordering number:EN3282
FC128
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistance (R1=10k).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC128 is formed with two chips, being equiva-
lent to the 2SC3859, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC128]
Electrical Connection
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
IC=10mA, IB=0.5mA
IC=10µA, IE=0
IC=100µA, RBE=
VCE=5V, IC=100µA
VCE=0.2V, IC=10mA
Note:The specifications shown above are for each individual transistor.
Marking:128
Ratings
50
50
5
100
200
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
100
250
3.3
0.1
50
50
0.4 0.55
0.7 1.2
7 10
max
0.1
0.1
0.3
0.8
3.0
13
Unit
µA
µA
MHz
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2160MO, TS No.3282-1/2

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