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FC131 fiches techniques PDF

Sanyo Semicon Device - PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Numéro de référence FC131
Description PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FC131 fiche technique
Ordering number:EN3285
FC131
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features
· On-chip bias resistances (R1=10kΩ, R2=47kΩ)).
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC131 is formed with two chips, being equiva-
lent to the 2SA1563, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC131]
Electrical Connection
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
–50
–50
–6
–100
–200
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistacne Ratio
Symbol
Conditons
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=–40V, IE=0
VCB=–40V, IB=0
VEB=–5V, IC=0
VCE=–5V, IC=–5mA
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
IC=–10mA, IB=–0.5mA
IC=–10µA, IE=0
IC=–100µA, RBE=
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–5mA
R1/R2
Ratings
min typ
–67
70
–50
–50
–0.5
–0.7
7
0.193
–88
200
5.1
–0.1
–0.7
–1.0
10
0.213
max
–0.1
–0.5
–125
–0.3
–0.9
–2.0
13
0.234
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
k
Note:The specifications shown above are for each individual transistor.
Marking:131
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2190MO, TS No.3285-1/2

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