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Número de pieza | FC139 | |
Descripción | Low-Frequency General-Purpose Amp/ General Driver Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FC139 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Ordering number:EN3324
FC139
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
General Driver Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC139 is formed with two chips, being equiva-
lent to the 2SC3689, placed in one package.
· Adoption of FBET process.
· High DC current gain (hFE=800 to 3200).
· High VEBO (VEBO≥15V)
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC139]
Electrical Connection
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
60
50
15
100
200
20
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
mW
˚C
˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Symbol
Conditons
ICBO
IEBO
hFE
hFE(small/
large)
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=40V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=50mA, IB=1mA
IC=50mA, IB=1mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
Ratings
min typ
800 1500
0.8 0.98
max
0.1
0.1
3200
Unit
µA
µA
200
1.5
0.1
0.8
60
50
15
MHz
pF
0.5 V
1.1 V
V
V
V
Note:The specifications shown above are for each individual transistor.
Marking:139
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2080MO, TS No.3324-1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet FC139.PDF ] |
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