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Sanyo Semicon Device - NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Numéro de référence FC144
Description NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FC144 fiche technique
Ordering number:EN3479
FC144
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Applications
· Switching circuits, inverter circuits, interface circuits,
driver circuits.
Features
· On-chip bias resistances (R1=2.2kΩ, R2=10k).
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC144 is formed with two chips, being equiva-
lent to the 2SC3863, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC144]
Electrical Connection
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Parameter
Symbol
Conditons
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
VCB=40V, IE=0
VCE=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
IC=10mA, IB=0.5mA
IC=10µA, IE=0
IC=100µA, RBE=
VCE=5V, IC=100µA
VCE=0.2V, IC=10mA
R1/R2
Note:The specifications shown above are for each individual transistor.
Marking:144
Ratings
50
50
6
100
200
200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Ratings
min typ
315
50
50
50
0.5
0.7
1.2
0.198
410
250
3.3
0.1
0.7
1.0
2.2
0.22
max
0.1
0.5
590
0.3
0.9
1.8
2.9
0.242
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/7190MH, TA (KOTO) No.3479-1/2

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