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Sanyo Semicon Device - High-Frequency Amp/ Current Mirror Circuit Applications

Numéro de référence FC151
Description High-Frequency Amp/ Current Mirror Circuit Applications
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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FC151 fiche technique
Ordering number:EN4652
FC151
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Current Mirror
Circuit Applications
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC151 is formed with two chips, being equiva-
lent to the 2SA1669, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2103A
[FC151]
Electrical Connection
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
–20
–15
–3
–50
200
300
150
–55 to +150
Unit
V
V
V
mA
mW
mW
˚C
˚C
Parameter
Symbol
Conditons
Ratings
min typ max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
ICBO
IEBO
hFE
hFE(small/
large)
VBE(large-
small)
VCB=–15V, IE=0
VEB=–2V, IE=0
VCE=–10V, IC=–5mA
VCE=–10V, IC=–5mA
VCE=–10V, IC=–5mA
–0.1 µA
–0.1 µA
20 100
0.7 0.93
3.0 15 mV
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
fT
Cob
| S21e |
NF
VCE=–10V, IC=–5mA
VCB=–10V, f=1MHz
VCE=–10V, IC=–5mA, f=0.9GHz
VCE=–10V, IC=–3mA, f=0.9GHz
1.5 3.0
GHz
1.0 1.5 pF
5 dB
2.0 dB
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and hFE(large-small) are for pair capability
Marking:151
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5

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