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FDC6318P fiches techniques PDF

Fairchild Semiconductor - Dual P-Channel 1.8V PowerTrench Specified MOSFET

Numéro de référence FDC6318P
Description Dual P-Channel 1.8V PowerTrench Specified MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDC6318P fiche technique
December 2001
FDC6318P
Dual P-Channel 1.8V PowerTrenchSpecified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
Power management
Load switch
Features
–2.5 A, –12 V. RDS(ON) = 90 m@ VGS = –4.5 V
RDS(ON) = 125 m@ VGS = –2.5 V
RDS(ON) = 200 m@ VGS = –1.8 V
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.318
FDC6318P
13’’
4
5
6
Ratings
–12
±8
–2.5
–7
0.96
0.9
0.7
–55 to +150
130
60
Tape width
12mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)

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