DataSheetWiki


FDD3672 fiches techniques PDF

Fairchild Semiconductor - N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m

Numéro de référence FDD3672
Description N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FDD3672 fiche technique
June 2002
FDD3672
N-Channel UltraFET® Trench MOSFET
100V, 44A, 28m
Features
• rDS(ON) = 24m(Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection System
42V Automotive Load Control
Formerly developmental type 82760
Electronic Valve Train System
GATE
DRAIN
(FLANGE)
SOURCE
TO-252AB
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
100
±20
44
31
6.5
Figure 4
120
135
0.9
-55 to 175
1.11
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A

PagesPages 11
Télécharger [ FDD3672 ]


Fiche technique recommandé

No Description détaillée Fabricant
FDD3670 100V N-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor
FDD3672 N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m Fairchild Semiconductor
Fairchild Semiconductor
FDD3672_F085 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche