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PDF FDD5614P Data sheet ( Hoja de datos )
| Número de pieza | FDD5614P | |
| Descripción | 60V P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2001
FDD5614P
60V P-Channel PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V
RDS(ON) = 130 mΩ @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5614P
FDD5614P
13’’
S
G
D
Ratings
–60
±20
–15
–45
42
3.8
1.6
–55 to +175
3.5
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD5614P Rev C(W)
1 page  
Typical Characteristics
10
ID = -4.5A
8
6
4
VDS = -40V
-20V
-30V
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
VGS = -10V
0.1
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
600
CISS
f = 1MHz
VGS = 0 V
400
200
0
0
CRSS
COSS
10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 96°C/W
30 TA = 25°C
20
10
0
0.1
1 10 100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 96°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD5614P Rev C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD5614P.PDF ] | |
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