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PDF FDD6296 Data sheet ( Hoja de datos )
| Número de pieza | FDD6296 | |
| Descripción | 30V N-Channel Fast Switching PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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June 2004
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
Features
• 50A, 30 V
RDS(ON) = 8.8 mΩ @ VGS = 10 V
RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
± 20
50
15
100
52
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6296
FDD6296
D-PAK (TO-252)
13’’
FDU6296
FDU2696
I-PAK (TO-251)
Tube
Tape width
12mm
N/A
Units
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6296/FDU6296 Rev C(W)
1 page  
Typical Characteristics
10
ID = 15A
8
VDS = 10V
6 15V
20V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
25
1000
RDS(ON) LIMIT
100
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
1800
f = 1MHz
VGS = 0 V
1200
Ciss
600 Coss
Crss
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
30
100
SINGLE PULSE
80 RθJA = 96°C/W
TA = 25°C
60
40
20
0
0.01 0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.0
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1 1
t1, TIME (sec)
10
100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6296/FDU6296 Rev. C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD6296.PDF ] | |
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