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PDF FDD6670S Data sheet ( Hoja de datos )
| Número de pieza | FDD6670S | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
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September 2001
FDD6670S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor Drives
Features
• 64 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6670S
FDD6670S
13’’
©2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
64
100
70
3.2
1.3
–55 to +150
1.8
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD6670S Rev E(W)
1 page  
Typical Characteristics (continued)
10
ID =13.5A
8
6
VD S = 5V
10V
15V
4
2
0
0 5 10 15 20 25 30 35 40 45
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R DS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 Rθ JA = 96 oC/W
T A = 25 oC
1 0 0µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
V DS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3600
3000
2400
1800
1200
600
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R θJA = 96°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * R θJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FDD6670S Rev E (W)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDD6670S.PDF ] | |
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