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FDN327N fiches techniques PDF

Fairchild Semiconductor - N-Channel 1.8 Vgs Specified PowerTrench MOSFET

Numéro de référence FDN327N
Description N-Channel 1.8 Vgs Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN327N fiche technique
October 2001
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Load switch
Battery protection
Power management
Features
2 A, 20 V.
RDS(ON) = 70 m@ VGS = 4.5 V
RDS(ON) = 80 m@ VGS = 2.5 V
RDS(ON) = 120 m@ VGS = 1.8 V
Low gate charge (4.5 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
DD
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
327
FDN327N
7’’
GS
Ratings
20
±8
2
8
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDN327N Rev C (W)

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