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FDN339AN fiches techniques PDF

Fairchild Semiconductor - N-Channel 2.5V Specified PowerTrench MOSFET

Numéro de référence FDN339AN
Description N-Channel 2.5V Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN339AN fiche technique
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrenchMOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Load switch
Features
3 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V
RDS(ON) = 0.050 @ VGS = 2.5 V.
Low gate charge (7nC typical).
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
339
FDN339AN
7’’
GS
Ratings
20
±8
3
20
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN339AN Rev. C

PagesPages 8
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