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Numéro de référence | FDN342P | ||
Description | P-Channel 2.5V Specified PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
August 1999
FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Applications
Load switch
Battery protection
Power management
Features
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V
RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
Rugged gate rating (±12V).
High performance trench technology for extremely
low RDS(ON).
Enhanced power SuperSOTTM-3 (SOT-23).
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDN342P
FDN342P
7’’
GS
Ratings
-20
±12
-2
-10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN342P Rev. B
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Pages | Pages 8 | ||
Télécharger | [ FDN342P ] |
No | Description détaillée | Fabricant |
FDN342P | P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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