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FDN342P fiches techniques PDF

Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

Numéro de référence FDN342P
Description P-Channel 2.5V Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN342P fiche technique
August 1999
FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Applications
• Load switch
• Battery protection
• Power management
Features
• -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V
RDS(ON) = 0.13 @ VGS = -2.5 V.
• Rugged gate rating (±12V).
• High performance trench technology for extremely
low RDS(ON).
• Enhanced power SuperSOTTM-3 (SOT-23).
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDN342P
FDN342P
7’’
GS
Ratings
-20
±12
-2
-10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN342P Rev. B

PagesPages 8
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