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Fairchild Semiconductor - N-Channel Logic Level PowerTrenchTM MOSFET

Numéro de référence FDN359
Description N-Channel Logic Level PowerTrenchTM MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN359 fiche technique
April 1999
FDN359AN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V
RDS(ON) = 0.060 @ VGS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
359A
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Fairchild Semiconductor Corporation
D
GS
Ratings
30
±20
2.7
15
0.5
0.46
-55 to 150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
FDN359AN Rev.C

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