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Fairchild Semiconductor - Single P-Channel PowerTrenchTM MOSFET

Numéro de référence FDN360P
Description Single P-Channel PowerTrenchTM MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDN360P fiche technique
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
-2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V
RDS(on) = 0.125 @ VGS = -4.5 V.
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
360
FDN360P
7’’
GS
Ratings
-30
±20
-2
-20
0.5
0.46
-55 to +150
Units
V
V
A
W
°C
250 °C/W
75 °C/W
Tape Width
8mm
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDN360P Rev. D

PagesPages 8
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