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Numéro de référence | FDN5618P | ||
Description | 60V P-Channel Logic Level PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
July 2000
PRELIMINARY
FDN5618P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V
RDS(ON) = 0.230 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Maximum Power Dissipation
PD
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
618
FDN5618P
7’’
GS
Ratings
–60
±20
–1.25
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5618P Rev B(W)
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Pages | Pages 8 | ||
Télécharger | [ FDN5618P ] |
No | Description détaillée | Fabricant |
FDN5618 | 60V P-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
FDN5618P | 60V P-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
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