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PDF FDS2070N7 Data sheet ( Hoja de datos )
| Número de pieza | FDS2070N7 | |
| Descripción | 150V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2003
FDS2070N7
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V
RDS(ON) = 88 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (38nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2070N7
FDS2070N7
13’’
Ratings
150
± 20
4.1
30
3.0
1.8
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor International
FDS2070N7 Rev C2(W)
1 page  
Typical Characteristics
10
ID = 4.1A
8
6
VDS = 25V
50V
75V
4
2
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 85oC/W
TA = 25oC
100µs
1 0 m s1 m s
100ms
1s
DC
0.001
0.1
1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
500 COSS
CRSS
0
0 30 60 90 120
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 85°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
10
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS2070N7 Rev C2(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS2070N7.PDF ] | |
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