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Numéro de référence | FDS2170N7 | ||
Description | 200V N-Channel PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
May 2003
FDS2170N7
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2170N7
FDS2170N7
13’’
Ratings
200
± 20
3.0
20
3.0
1.8
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS2170N7 Rev C3(W)
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Pages | Pages 6 | ||
Télécharger | [ FDS2170N7 ] |
No | Description détaillée | Fabricant |
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