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FDS2582 fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m

Numéro de référence FDS2582
Description N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS2582 fiche technique
September 2002
FDS2582
N-Channel PowerTrench® MOSFET
150V, 4.1A, 66m
Features
• rDS(ON) = 57m(Typ.), VGS = 10V, ID = 4.1A
• Qg(tot) = 19nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82855
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS2582
Device
FDS2582
Package
SO-8
Reel Size
330mm
54
63
72
81
Ratings
150
±20
4.1
2.6
Figure 4
252
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
50 oC/W
80 oC/W
25 oC/W
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B

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