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Fairchild Semiconductor - P-Channel PowerTrench MOSFET

Numéro de référence FDS4435
Description P-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS4435 fiche technique
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–8.8 A, –30 V
RDS(ON) = 20 m@ VGS = –10 V
RDS(ON) = 35 m@ VGS = –4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435
FDS4435
13’’
©2001 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
–30
±25
–8.8
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDS4435 Rev F1(W)

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