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Número de pieza | FDS4559 | |
Descripción | 60V Complementary PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! April 2002
FDS4559
60V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Power management
• LCD backlight inverter
Features
• Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS = –4.5V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4559
FDS4559
13”
Q1 Q2
60 –60
±20 ±20
4.5 –3.5
20 –20
2
1.6
1.2
1
-55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)
1 page Typical Characteristics: Q2
10
ID = -3.0A
8
6
VDS = 10V
20V
30V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
100µs
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 135oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
C IS S
f = 1 MHz
VGS = 0 V
400
200
0
0
CRSS
COSS
10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559 Rev C1(W)
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDS4559.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDS4559 | 60V Complementary PowerTrench MOSFET | Fairchild Semiconductor |
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