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Fairchild Semiconductor - Dual 30V P-Channel PowerTrench MOSFET

Numéro de référence FDS4935
Description Dual 30V P-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS4935 fiche technique
March 2002
FDS4935A
Dual 30V P-Channel PowerTrenchMOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
Power management
Load switch
Battery protection
Features
–7 A, –30 V
RDS(ON) = 23 m@ VGS = –10 V
RDS(ON) = 35 m@ VGS = –4.5 V
Low gate charge (15nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD1DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5
6 Q1
7
Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4935A
FDS4935A
13’’
Ratings
–30
±20
–7
–30
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS4935A Rev A(W)

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