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Fairchild Semiconductor - 60V N-Channel PowerTrench MOSFET

Numéro de référence FDS5670
Description 60V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS5670 fiche technique
August 1999
FDS5670
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
• 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V
RDS(ON) = 0.017 @ VGS = 6 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
5
6
7
8
Ratings
60
±20
10
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS5670
FDS5670
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS5670 Rev. B

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