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Fairchild Semiconductor - Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET

Numéro de référence FDS6575
Description Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS6575 fiche technique
November 1998
FDS6575
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-10 A, -20 V. RDS(ON) = 0.013 @ VGS = -4.5 V,
RDS(ON) = 0.017 @ VGS = -2.5 V.
Low gate charge (50nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D
D
D
D
FD65S75
SO-8
pin 1
S
G
S
S
SO-8
5
6
7
8
SOT-223
SOIC-16
4
3
2
1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6575
-20
±8
-10
-50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
FDS6575 Rev.C1

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