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Numéro de référence | FDS6576 | ||
Description | P-Channel 2.5V Specified PowerTrenchTM MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
November 1999
PRELIMINARY
FDS6576
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
Load switch
Battery protection
Power management
Features
-11 A, -20 V. RDS(ON) = 0.014 Ω @ VGS = -4.5 V
RDS(ON) = 0.020 Ω @ VGS = -2.5 V
± Extended VGSS range ( 12V) for battery applications.
Low gate charge (44nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
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©1999 Fairchild Semiconductor Corporation
FDS6576 Rev. B
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Pages | Pages 8 | ||
Télécharger | [ FDS6576 ] |
No | Description détaillée | Fabricant |
FDS6570A | Single N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDS6572A | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6574A | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6575 | Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET | Fairchild Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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