FDT434P Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

شماره قطعه	FDT434P
شرح مفصل	P-Channel 2.5V Specified PowerTrench MOSFET
تولید کننده	Fairchild Semiconductor
آرم
1 Page No Preview Available ! January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Low Dropout Regulator • DC/DC converter • Load switch • Motor driving Features • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surface mount package. DD DD S SOT-223 D G GDS S SOT -2 2 3 * (J2 3 Z ) G G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Ratings –20 ±8 –6 –30 3 1.3 1.1 -55 to +150 42 12 Package Marking and Ordering Information Device Marking Device Reel Size 434 FDT434P 13’’ Tape width 12mm S Units V V A W °C °C/W °C/W Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDT434P Rev. C1 (W)
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
FDT434P	P-Channel 2.5V Specified PowerTrench MOSFET	Fairchild Semiconductor

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