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FDZ206P fiches techniques PDF

Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench

Numéro de référence FDZ206P
Description P-Channel 2.5V Specified PowerTrench
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDZ206P fiche technique
January 2003
FDZ206P
P-Channel 2.5V Specified PowerTrench  BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ206P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Load switch
Battery protection
Features
–13 A, –20 V. RDS(ON) = 9.5 m@ VGS = –4.5 V
RDS(ON) = 14.5 m@ VGS = –2.5 V
Occupies only 14 mm2 of PCB area.
Only 42% of the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
0.65 mm ball pitch
3.5 x 4 mm2 footprint
High power and current handling capability
Pin 1
D DDD DD
D SSS SD
D SSS SD
D SSS SD
DGSS SD
Bottom
Pin 1
Top
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
206P
FDZ206P
13”
Ratings
–20
±12
–13
–60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2003 Fairchild Semiconductor Corporation
FDZ206P Rev. D1(W)

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