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Fairchild Semiconductor - 60V N-Channel PowerTrench BGA MOSFET

Numéro de référence FDZ209N
Description 60V N-Channel PowerTrench BGA MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDZ209N fiche technique
May 2004
FDZ209N
60V N-Channel PowerTrench  BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ209N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
Solenoid Drivers
Features
4 A, 60 V.
RDS(ON) = 80 m@ VGS = 5 V
Occupies only 5 mm2 of PCB area: only 55% of the
area of SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Qg x RDS(ON) figure-of-merit
High power and current handling capability
Index
slot
DDD
SSS
GSS
DDD
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
209N
FDZ209N
7’’
D
G
S
Ratings
60
±20
4
20
2
–55 to +150
64
8
0.7
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ209N Rev B2 (W)

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