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PDF FA01215 Data sheet ( Hoja de datos )
| Número de pieza | FA01215 | |
| Descripción | GaAs FET HYBRID IC | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band
small size handheld radio.
FEATURES
• Low voltage
• High gain
• High efficiency
• High power
3.0V
24dB(typ.)
50%
34.5dBm
APPLICATION
GSM IV
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
14.7
14.2
0.6 2 3.5 2 3.5 2
Unit:mm
6
12 3 45
2.25 2.5 2.5 2.5 2.5 1.95
0.25±0.1
0.5±0.15
1 RF INPUT
2 VG1,2
3 VD1
4 VD2
5 RF OUTPUT
6 GND(FIN)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
Ta
VD Drain voltage
PO≤34.5dBm
25˚C
Pin Input power
ZG=ZL=50Ω
25˚C
TC(op) Operation case temperature.
–
Tstg Storage temperature.
–
Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation.
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
Limits
Min Typ Max
f Frequency
890 – 915
PO Output power
Note1
34.5 –
–
ht Total efficiency
Igt Total gate current
Note2
50 –
-3 –
–
0
rin
2fo,3fo
Return loss
2nd harmonics, 3rd harmonics Note3
– – -6
– – -30
OSC.T Stability
Note4
– – -60
VSWR.T Load VSWR tolerance
Note5
No degradation or destroy
Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω
Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω
Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50Ω
Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ρL=3:1(all phase),ZG=50Ω
Note5: PO=34.5dBm(Pin controlled),VD1=VD2=4.5V(Pulse:P.W.=580µs,duty=1/8),VG1,2=-2.0V,ρL=6:1(all phase),ZG=50Ω
Unit
MHz
dBm
%
mA
dB
dBc
dBc
–
Nov. ´97
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FA01215.PDF ] | |
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