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Fairchild Semiconductor - 1.0 Ampere Superfast Rectifiers

Numéro de référence ES1A
Description 1.0 Ampere Superfast Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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ES1A fiche technique
Discrete POWER & Signal
Technologies
ES1A - ES1D
Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for
high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
1.0 Ampere Superfast Rectifiers
0.062 (1.575)
0.055 (1.397)
2
0.181 (4.597)
0.157 (3.988)
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
0.096 (2.438)
0.078 (1.981)
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Parameter
Average Rectified Current
@ TA = 120°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient**
Thermal Resistance, Junction to Lead**
Storage Temperature Range
Operating Junction Temperature
Value
1.0
30
1.47
11.76
85
35
-50 to +150
-50 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 100°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
TA = 25°C unless otherwise noted
Device
1A 1B
50 100
35 70
50 100
1C
150
105
150
5.0
100
15
0.92
7.0
Units
1D
200 V
140 V
200 V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. A

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